Web分類 製品分類: パワー半導体 > igbts > igbts 資料分類: データシート > データシート Web富士電機の独自技術で逆耐圧を有するRB-IGBTを製品化し、双方向スイッチや3レベルインバータ回路を構成できます。 シリーズ一覧 ディスクリートIGBT XSシリーズ 650V, 1200Vクラス ディスクリート IGBT Vシリーズ/High-Speed Vシリーズ/RB-IGBT 600V, 1200Vクラス ディスクリートIGBT XSシリーズ 650V, 1200Vクラス 製品紹介資料 製 …
資料詳細 - Fe Library - 富士電機
WebFGW50XS65. The FGW50XS65 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.7 V, DC Collector Current 50 to 77 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 2 uA. More details for FGW50XS65 can be seen below. WebThe FGW75XS65 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.7 V, DC Collector Current 75 to 115 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 2 uA. More details for FGW75XS65 can be seen below. Product Specifications View similar products … can methamphetamine cause seizures
XS series (7th-Gen) Model: FGW40XS120C - Fuji Electric Corp. of …
Web经销商销售:FGW40XS120C FUJI, FGW40XS65, FGW40XS65C。 【FGW40XS120C FUJI】Buy Now【FGW40XS65】【FGW40XS65C】【Price】In Stock, Semiconductor, Capacitor, IC, new update 2024【Datasheet】【PDF】 HGCacheDateZOZZIIZB WebFuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. WebFGW40N120HDDiscrete IGBT Discrete IGBT (High-Speed V series) 1200V / 40A Features Low power loss Low switching surge and noise High reliability, high ruggedness … can methamphetamine cause leukocytosis